QID0630006 powerex inc., 200 hillis st., youngwood, pa 15697 (724) 925-7272 dual igbt h-series hermetic module 300 amperes/600 volts page 1 4/11/2001 description: powerex igbt hermetic modules are designed for use in switching applications. each module consists of two igbt transistors in a half bridge configuration with each transistor having a reverse connected super fast recovery free wheel diode. all components are located in a hermetically sealed chamber and are electrically isolated from the heat sinking base plate, offering simplified system assembly and thermal management. features: ? low drive power ? low v ce(sat) ? discrete fast recovery free-wheel diode ? high frequency operation (20- 25khz) ? isolated base plate for easy heat sinking ? fully hermetic package ? package design capable of use at high altitudes schematic: applications: ? ac motor control ? motion/servo control ? air craft applications ordering information: contact powerex custom modules
QID0630006 powerex inc., 200 hillis st., youngwood, pa 15697 (724) 925-7272 dual igbt h-series hermetic module 300 amperes/600 volts page 2 4/11/2001 maximum ratings, tj=25 c unless otherwise specified ratings symbol units collector emitter voltage v ces 600 volts gate emitter voltage v ges 20 volts collector current i c 300 amperes peak collector current i cm 600* amperes diode forward current i fm 300 amperes diode forward surge current i fm 600* amperes power dissipation p d 1100 watts v isolation v rms 2500 volts static electrical characteristics, tj=25 c unless otherwise specified characteristic symbol test conditions min typ max units collector cutoff current i ces v ce =v ces 1.0 ma gate leakage current i ges v ce =0v 0.5 a gate-emitter threshold voltage v ge(th) i c =30ma, v ce =10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c =300a, v ge =15v 2.1 2.8 volts v ce(sat) i c =300a, v ge =15v, t j =150 c 2.15 volts total gate charge q g v cc =300v, i c =300a, v gs =15v 900 nc diode forward voltage v fm i e =300a, v gs =0v 2.8 volts dynamic electrical characteristics, tj=25 c unless otherwise specified characteristic symbol test conditions min typ max units input capacitance c ies v ge =0v 30 nf output capacitance c oes v ce =10v 10.5 nf reverse transfer capacitance c res f=1mhz 6 nf turn on delay time t d(on) v cc =300v 350 ns rise time t r i c =300a 600 ns turn off delay time t d(off) v ge1 =v ge2 =15 v 350 ns fall time t f r g =2.1 ? 300 ns diode reverse recovery time trr i e =300a 150 ns diode reverse recovery charge qrr di e /dt=- 600a/ s 0.81 c thermal and mechanical characteristics, tj=25 c unless otherwise specified characteristic symbol test conditions min typ max units thermal resistance, junction to case r jc per igbt 0.11 c/w thermal resistance, junction to case r jc per diode 0.24 c/w
QID0630006 powerex inc., 200 hillis st., youngwood, pa 15697 (724) 925-7272 dual igbt h-series hermetic module 300 amperes/600 volts page 3 4/11/2001
QID0630006 powerex inc., 200 hillis st., youngwood, pa 15697 (724) 925-7272 dual igbt h-series hermetic module 300 amperes/600 volts page 4 4/11/2001
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